Dr. James Owen
Zyvex Labs, USA
Wednesday, March 25
16:30
Abstract
Single-nm Nanoimprint Masks by STM Lithography, ALD and ALE, for an Energy-Efficient Alternative to EUV
EUV is reaching its limits, with a resolution of 8 nm, and the cost of the tools is increasing exponentially with each generation. Simultaneously, e-beam lithography, used to write masks, has reached its resolution limits around 10 nm. Canon Nanotechnology has suggested that Nanoimprint Lithography (NIL) can replace EUV with better resolution and precision.
We are developing an STM lithography tool, to write 5 nm NIL masks, comprising an array of tips with independent MEMS z-actuators, moving together with a common xy stage, using a new STM lithography method to enable raster lithography at up to 1 um/s with a linewidth of 1.5 nm.
Biography
James has a BEng and MA (Oxon) in Metallurgy and Science of Materials (1993) and a DPhil (Oxon) in Materials Science (1996). Since then, he has worked at UCSB, UCLA and HRL, and the National Institute for Materials Science (Tsukuba, Japan) as an Independent Research Fellow. He worked with Prof. Renner at the University of Geneva setting up a new research group, before joining Zyvex Labs in 2010. He has used STM to study atomic-scale chemistry, self-assembled nanostructures and epitaxial growth processes on semiconductors, while at Zyvex Labs, he has focussed on developing high-speed atomically precise STM lithography.