Dr. Salvatore Ethan Panasci
CNR-IMM Catania, IT
Thursday, March 26
15:45
Abstract
Laterally Resolved Strain Variations inside the Channel of Monolayer MoS2 Transistors
Measuring and controlling the homogeneity of strain within the channel is crucial for next generation MoS2 field effect transistors (FETs). This paper reports a multiscale investigation of backgated FETs fabricated using 1L MoS2 grown by liquid precursors chemical vapour deposition. An inhomogeneous tensile strain (ε) distribution along the channel was revealed by Raman and PL mapping, with a reduced ε and blue-shifted PL energy close to the Ni/Au contacts induced by metal deposition. The implications of these observations on the effective mass variation along the channel and the current injection from contacts have been discussed for future ultra-scaled devices.
Biography
Salvatore Ethan Panasci received his M.Sc. degree in Materials Science in 2019 from the University of Padova (Italy) and Ph.D. in Material Science and Nanotechnology in 2022 from the University of Catania (Italy). From 2023 he is temporary researcher at the Institute for Microelectronics and Microsystems of the Italian National Research Council (CNR-IMM) of Catania. His scientific activities cover both the growth (DLI/CVD) and characterization of 2D materials (graphene, transition metal dichalcogenides) by atomic force microscopy (including C-AFM, KPFM) and Raman/PL spectroscopy. His work is also focused on the 2D materials integration with bulk wide band gap semiconductors (SiC, GaN).